A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications

In this paper, a novel InGaP/GaAs multiple S-shaped negative-differential-resistance (NDR) switch based on a heterostructure-emitter bipolar transistor (HEBT) structure is fabricated and demonstrated. An interesting multiple NDR phenomenon resulting from an avalanche multiplication and successive two-stage barrier lowering process is observed under the inverted operation mode. The three-terminal-controlled and temperature-dependent NDR characteristics are also investigated. In addition, a typical transistor performance is found under the normal operation mode. Consequently, owing to the presented different stable operation points and transistor action, the studied device shows a good potential for multiple-valued logic and analog amplification circuit applications.

[1]  S. Sen,et al.  Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications , 1987, IEEE Electron Device Letters.

[2]  Y. F. Yang,et al.  Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors , 1995 .

[3]  Y. Fang,et al.  A novel amorphous silicon doping superlattice device with double switching characteristics for multiple-valued logic applications , 1993, IEEE Electron Device Letters.

[4]  Y. F. Yang,et al.  Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors , 1994 .

[5]  G. Stillman,et al.  Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base , 1993, IEEE Electron Device Letters.

[6]  Characteristics of a GaAs metal-n+-v-δ (p+)-v-n+ switch , 1994 .

[7]  Yeong-Her Wang,et al.  Investigation of AlGaAs/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) , 1992 .

[8]  T. Andersson,et al.  A multiple-state memory cell based on the resonant tunneling diode , 1988, IEEE Electron Device Letters.

[9]  S. Takahashi,et al.  A triple-well resonant tunneling diode for multiple-valued logic application , 1988, IEEE Electron Device Letters.

[10]  Y. F. Yang,et al.  Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain , 1995 .

[11]  A. Rezazadeh,et al.  Temperature dependence of current gains in high C-doped base HBTs , 1994 .

[12]  Hao-Hsiung Lin,et al.  Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design , 1985 .

[13]  R. Kiehl,et al.  Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device , 1985 .

[14]  W. Lour,et al.  AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy , 1991 .

[15]  J. Cunningham,et al.  Perpendicular electronic transport in doping superlattices , 1987 .

[16]  S. Lu,et al.  Small offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs double-barrier bipolar transistor , 1992, IEEE Electron Device Letters.

[17]  A silicon double switching inversion-controlled switch for multiple-valued logic applications , 1993 .