Circuit means having a plurality of TMR sensor elements

Circuit means of magnetoresistive sensor elements that exhibit a relative to a AMR effect increased magnetoresistive TMR effect and the in each case one formed on a silicon substrate thin film sequence with at least - a soft magnetic detection layer - a relatively magnetically harder layer or reference layer with a corresponding reference system, - a decoupling layer located between these layers of insulating material as a tunnel barrier and - have electrical connections on the reference layer or the reference layer system and the detecting layer, said voltage-limiting protective circuits (S wherein at least four to form a Wheatstone Bridge (B1, B2) connected in parallel with two current-carrying bridge branches (ZW1 Zw2) interconnected magnetoresistive TMR sensor elements (E - one of the branches (ZW1 Zw2) form of the bridge (B1, B2) and - in...