论文信息 - Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging - 字舞流文

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

P. Neudeck | C. Eddy | M. Twigg | J. Caldwell | M. Mastro | R. Holm | Y. Picard | J. Powell | M. E. Twigg | M. A. Mastro | A. J. Trunek