A single-chip 94-GHz frequency source using InP-based HEMT-HBT integration technology

This paper presents the development of a 94-GHz monolithic frequency source using InP-based HEMT-HBT integration technology. This single-chip frequency source consists of five sub-circuits: a 23.5-GHz HBT VCO, a 23.5-GHz HBT buffer amplifier, a 23.5 to 47 GHz HEMT frequency doubler, a 47 GHz HEMT buffer amplifier, and a 47 to 94 GHz HEMT doubler. The source chip has a peak output power of 1.6 dBm, with tuning range from 90.8 GHz to 94.3 GHz. This is the highest-level integration of millimeter-wave solid-state integrated circuits using this technology reported to date.

[1]  G. S. Dow,et al.  A W-band source module using MMICs , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[2]  Richard Lai,et al.  A 140-GHz monolithic low noise amplifier , 1987, IEEE Microwave and Guided Wave Letters.

[3]  Kevin W. Kobayashi,et al.  Monolithic HEMT-HBT integration by selective MBE , 1995 .

[4]  Kevin W. Kobayashi,et al.  A wideband HEMT cascode low-noise amplifier with HBT bias regulation , 1995 .

[5]  R. Lai,et al.  A 140-GHz monolithic low noise amplifier , 1995, IEEE Microwave and Guided Wave Letters.

[6]  Kevin W. Kobayashi,et al.  Monolithic HEMT-HBT integration for novel microwave circuit applications , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[7]  G. S. Dow,et al.  A 62-GHz monolithic InP-based HBT VCO , 1995 .

[8]  R. Lai,et al.  Monolithic integration of InP HBT and HEMT by selective molecular beam epitaxy , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[9]  G. S. Dow,et al.  A W-band source module using MMIC's , 1994 .