Properties of Heavily Doped n‐Type Germanium

The electrical and optical properties of n‐type germanium have been studied for doping levels greater than 5×1018 cm−3. Hall coefficient and resistivity measurements show that the electron mobility μ depends upon the specific group V donor used as a dopant and, at a given carrier concentration, increases in the order μAs<μP<μSb. In material doped very heavily with arsenic, a large fraction of the arsenic was found to be electrically inactive. Rapid quenching of this material resulted in larger carrier concentrations and a better correlation with crystal growth parameters. Distribution coefficients were calculated from the electrical measurements on antimony‐doped crystals grown by a solvent evaporation technique. No significant ``facet effect'' was observed for these crystals. Reflectivity measurements between 2 and 24 μ were used to deduce the electron effective mass as a function of carrier concentration. In the carrier concentration range studied (up to 8×1019 cm−3), the effective mass increases only s...

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