TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

The surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A TiO2 anatase layer of about 2.5nm thick on TiN thin film was characterized by high-resolution scanning transmission electron microscopy. The results suggested that the high-speed resistive change was derived from the Mott transition in the TiO2 anatase nanolayer, and the obtained results could relate to the formation of filament paths previously reported in binary transition metal oxide thin films exhibiting resistive switching.

[1]  D. Morgan,et al.  Electrical phenomena in amorphous oxide films , 1970 .

[2]  K. Pourrezaei,et al.  Failure mechanisms of TiN thin film diffusion barriers , 1988 .

[3]  N. Kosugi,et al.  Electron energy loss and X-ray absorption spectroscopy of rutile and anatase: a test of structural sensitivity , 1989 .

[4]  H. Hoffmann,et al.  Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy , 1990 .

[5]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[6]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[7]  K. Szot,et al.  Localized metallic conductivity and self-healing during thermal reduction of SrTiO3. , 2002, Physical review letters.

[8]  Tx,et al.  Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.

[9]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3 , 2004, cond-mat/0411474.

[10]  Hideaki Adachi,et al.  Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature , 2004 .

[11]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[12]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[13]  M. Rozenberg,et al.  Nonvolatile memory with multilevel switching: a basic model. , 2004, Physical review letters.

[14]  Alexander M. Grishin,et al.  Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition , 2005 .

[15]  Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0.7Ca0.3MnO3–Pt sandwiches , 2005 .

[16]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[17]  S. H. Kim,et al.  Conductivity switching characteristics and reset currents in NiO films , 2005 .

[18]  Hiroshi Koyama,et al.  High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin Film , 2006 .