论文信息 - High‐power operation of index‐guided visible GaAs/GaAlAs multiquantum well lasers

High‐power operation of index‐guided visible GaAs/GaAlAs multiquantum well lasers

Stable transverse mode operation has been realized for the first time in visible (780 nm) multiquantum well lasers composed of seven 3‐nm‐thick GaAs wells separated by six 5‐nm‐thick Ga0.8Al0.2As barriers grown by metalorganic chemical vapor deposition. A self‐aligned structure with a built‐in optical waveguide to stabilize the transverse mode is fabricated by a two‐step epitaxial technique. Low threshold current (35 mA), high output power (up to 40 mW) in the fundamental transverse mode, and a very low degradation rate at 70 °C have been confirmed.

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