论文信息 - Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

A graded‐index separate‐confinement strained‐layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices is 195 A/cm2.

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