Interaction of ion-implantation-induced interstitials in B-doped SiGe

[1]  P. Griffin,et al.  Boron diffusion in strained and strain-relaxed SiGe , 2005 .

[2]  J. W. Liu,et al.  Dislocation loops in silicon-germanium alloys: The source of interstitials , 2005 .

[3]  A. Larsen,et al.  {311} Defect evolution in Si-implanted Si1−xGex alloys , 2003 .

[4]  G. Mannino,et al.  Electrical activation of B in the presence of boron-interstitials clusters , 2001 .

[5]  A. Willoughby,et al.  Antimony and boron diffusion in SiGe and Si under the influence of injected point defects , 2001 .

[6]  N. Cowern,et al.  Enhanced Diffusion in Silicon Processing , 2000 .

[7]  C. Spinella,et al.  Transition from small interstitial clusters to extended {311} defects in ion-implanted Si , 2000 .

[8]  M. Law,et al.  EVOLUTION OF 311 TYPE DEFECTS IN BORON-DOPED STRUCTURES : EXPERIMENTAL EVIDENCE OF BORON-INTERSTITIAL CLUSTER FORMATION , 1999 .

[9]  A. Willoughby,et al.  Boron diffusion across silicon–silicon germanium boundaries , 1998 .

[10]  J. Poate,et al.  B diffusion and clustering in ion implanted Si: The role of B cluster precursors , 1997 .

[11]  P. A. Stolk,et al.  Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon , 1996 .

[12]  P. Griffin,et al.  Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2 , 1996 .

[13]  M. Iwaki,et al.  Beam-solid interactions for materials synthesis and characterization , 1995 .

[14]  J. Hoyt,et al.  Effects of strain on boron diffusion in Si and Si1−xGex , 1995 .

[15]  P. Stolk,et al.  TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON , 1995 .

[16]  James D. Plummer,et al.  Transient diffusion of low‐concentration B in Si due to 29Si implantation damage , 1990 .

[17]  P. Griffin,et al.  Point defects and dopant diffusion in silicon , 1989 .

[18]  W. Godwin.  Article in Press , 2000 .

[19]  P. Stolk,et al.  Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon , 1994 .