Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates

Abstract The degradation and annealing studies on Colbalt-60 gamma-rays irradiated commercial-off-the-shelf (COTS) pinned photodiode (PPD) CMOS image sensors (CISs) at the various dose rates are presented. The irradiation experiments of COTS PPD CISs are carried out at 0.3, 3.0 and 30.0 rad(Si)/s. The COTS PPD CISs are manufactured using a standard 0.18-μm CMOS technology with four-transistor pixel PPD architecture. The behavior of the tested CISs shows a remarkable degradation after irradiation and differs in the dose rates. The dark current, dark signal non-uniformity (DSNU), random noise, saturation output, signal to noise ratio (SNR), and dynamic range (DR) versus the total ionizing dose (TID) at the various dose rates are investigated. The tendency of dark current, DSNU, and random noise increase and saturation output, SNR, and DR to decrease at 3.0 rad(Si)/s are far greater than those at 0.3 and 30.0 rad(Si)/s. The damage mechanisms caused by TID irradiation at the various dose rates are also analyzed. The annealing tests are carried out at room temperature with unbiased conditions after irradiation.

[1]  Ray Bell,et al.  A 512 512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science , 2003 .

[2]  Olivier Marcelot,et al.  Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors , 2014, IEEE Journal of the Electron Devices Society.

[3]  R. Turchetta.  CMOS monolithic active pixel sensors (MAPS) for scientific applications : Some notes about radiation hardness , 2007 .

[4]  D. Passeri,et al.  Characterization of CMOS Active Pixel Sensors for particle detection: Beam test of the four-sensors RAPS03 stacked system , 2010 .

[5]  M. Gaillardin,et al.  Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose , 2012, IEEE Transactions on Nuclear Science.

[6]  P. Paillet,et al.  Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors , 2011, IEEE Transactions on Nuclear Science.

[7]  Pierre Magnan,et al.  Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process , 2009 .

[8]  Richard Henderson,et al.  CMOS active pixel sensors for ionising radiation , 2005 .

[9]  Yan Li,et al.  CMOS sensors for the vertex detector of the future international linear collider , 2007 .

[10]  Masatoshi Kureta,et al.  Development of a high-speed camera system for neutron imaging at a pulsed neutron source , 2013 .

[11]  Claude Colledani,et al.  A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology , 2001 .