Spatial Characterization Of Semiconductors Using 'Laser Beam Induced Current (LBIC)'

An optical analog of Electron Beam Induced Current (EBIC) technique called laser beam induced current (LBIC) has been developed and utilized to obtain maps of electrically active defects in semiconductor materials. We have demonstrated the use of LBIC for spatial evaluation of LPE HgCdTe and for characterizing HgCdTe p-n junction detector arrays, in a non-destructive way without making any electrical contacts to individual detector elements.