Values of crystalline‐solid Debye temperatures depend both on the method and temperature of measurement. Simple relationships between Debye temperatures and such cohesive properties as compressibility and melting point were derived over 60 years ago by Madelung, by Einstein, and by Lindemann. Debye temperatures ΘXR of a number of piezoelectric semiconductors with chalcopyrite structure have been determined at room temperature by x‐ray diffraction. A new series of heat capacity measurements over the temperature range 1.2–40 °K, for four chalcopyrites, give ΘD values at 0 °K. A common proportionality is found between each of these ΘXR and ΘD values and microhardness, and also melting point: Acceptable reproducibility is given for the AIBIIICVI2 chalcopyrites and, separately, the AIIBIVCV2 compounds. Values of Θ are predicted for 15 additional chalcopyrites. Excellent proportionality between Θelastic and compressibility is found for the europium chalcogenides, based on the data of Shapira and Reed.Values of crystalline‐solid Debye temperatures depend both on the method and temperature of measurement. Simple relationships between Debye temperatures and such cohesive properties as compressibility and melting point were derived over 60 years ago by Madelung, by Einstein, and by Lindemann. Debye temperatures ΘXR of a number of piezoelectric semiconductors with chalcopyrite structure have been determined at room temperature by x‐ray diffraction. A new series of heat capacity measurements over the temperature range 1.2–40 °K, for four chalcopyrites, give ΘD values at 0 °K. A common proportionality is found between each of these ΘXR and ΘD values and microhardness, and also melting point: Acceptable reproducibility is given for the AIBIIICVI2 chalcopyrites and, separately, the AIIBIVCV2 compounds. Values of Θ are predicted for 15 additional chalcopyrites. Excellent proportionality between Θelastic and compressibility is found for the europium chalcogenides, based on the data of Shapira and Reed.
[1]
A. Einstein.
Eine Beziehung zwischen dem elastischen Verhalten und der spezifischen Wärme bei festen Körpern mit einatomigem Molekül [AdP 34, 170 (1911)]
,
2005,
Annalen der Physik.
[2]
W. O. Groves,et al.
The Elastic Constants of Gallium Phosphide
,
1968
.
[3]
S. Abrahams,et al.
Piezoelectric nonlinear optic CuGaSe2 and CdGeAs2: Crystal structure, chalcopyrite microhardness, and sublattice distortion
,
1974
.
[4]
J. C. Irwin,et al.
Specific heats of ZnTe, ZnSe, and GaP
,
1974
.
[5]
R. Grant,et al.
Structural dependence of birefringence in the chalcopyrite structure. Refinement of the structural parameters of ZnGeP2 and ZnSiAs2
,
1973
.
[6]
L. G. Uitert,et al.
Hardness anisotropy of SrF2, BaF2, NaCl and AgCl crystals
,
1973
.
[7]
T. Reed,et al.
Sealed crucible technique for thermal analysis of volatile compounds up to 2500 °C: Melting points of EuO, EuS, EuSe and EuTe
,
1972
.
[8]
V. Tarassov,et al.
Heat Capacity and Quasi‐Chain Dynamics of Diamond‐Like Structures
,
1968
.
[9]
J. M. Stewart,et al.
The crystal structure refinement of chalcopyrite, CuFeS2
,
1973
.
[10]
S. Abrahams,et al.
Luminescent Piezoelectric CdSiP2: Normal Probability Plot Analysis, Crystal Structure, and Generalized Structure of the AIIBIVC2V Family
,
1971
.
[11]
P. Gielisse,et al.
Compressibility, Cohesive Energy, and Hardness of Non‐Metallic Solids
,
1965
.
[12]
W. Reed,et al.
Calorimetric investigation of Tl5Te3 superconductivity
,
1973
.