论文信息 - A generalized Frenkel-Kontorova model of the Ga/Si(112) dimerized overlayer system with vacanciesProject supported by the National Natural Science Foundation of China (Grant No. 19774049), and the Science Foundation of China Academy of Engineering Physics (Grant Nos. 970116 and 980112).

A generalized Frenkel-Kontorova model of the Ga/Si(112) dimerized overlayer system with vacanciesProject supported by the National Natural Science Foundation of China (Grant No. 19774049), and the Science Foundation of China Academy of Engineering Physics (Grant Nos. 970116 and 980112).

We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).

[1] Xu Hai-bo,et al. Phase Diagrams of One-Dimensional Commensurate-Incommensurate Transition Model with Triple-Well Interactions , 2000 .

[2] Bambi Hu,et al. Generalized Frenkel-Kontorova models , 1994 .

[3] Michel Peyrard,et al. Critical behaviour at the transition by breaking of analyticity in the discrete Frenkel-Kontorova model , 1983 .

[4] K. Pandey. Reconstruction of the Si(100)-2x1 Surface , 1985 .

[5] Liu,et al. Interplay of stress, structure, and stoichiometry in Ge-covered Si(001). , 1996, Physical review letters.

[6] Jackson,et al. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. , 1992, Physical review. B, Condensed matter.

[7] Tersoff. Missing dimers and strain relief in Ge films on Si(100). , 1992, Physical review. B, Condensed matter.