论文信息 - Pump to Stokes RIN transfer in silicon Raman lasers

Pump to Stokes RIN transfer in silicon Raman lasers

The pump-to-Stokes RIN Transfer and its impact on output characteristic in silicon Raman lasers are numerically investigated. The result shows that RIN transfer strongly influence on the output RIN of the chip scale silicon Raman laser. High-frequency RIN transfer show intense oscillation at about109Hz, which is several orders higher than that in Raman fiber laser (about104Hz ). We also find that RIN transfer reaches a peak value at resonance frequencies and decreases with the increasing the free carrier lifetime.

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