论文信息 - InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

[1] K. Merghem,et al. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate , 2012, 2012 International Conference on Indium Phosphide and Related Materials.

[2] Abderrahim Ramdane,et al. High performance mode locking characteristics of single section quantum dash lasers. , 2012, Optics express.

[3] E. Semenova,et al. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band , 2012 .

[4] J. R. Liu,et al. Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers , 2011 .

[5] Philippe Caroff,et al. High-gain and low-threshold InAs quantum-dot lasers on InP , 2005 .

[6] Wilson Sibbett,et al. High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser , 2005 .

[7] Hiroshi Ito,et al. Recovery of 160 GHz optical clock from 160 Gbit/s data stream using modelocked laser diode , 2004 .

[8] G. Patriarche,et al. Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm , 2001 .