Growth of perovskite PZT and PLZT thin films

This paper reports preliminary results on the fabrication of perovskite PZT and PLZT thin films using a sputtering technique. For glass, quartz and sapphire substrates, it was necessary to raise the substrate temperature above 550 ° C to achieve perovskite tetragonal structures of interest. Growth at temperatures below 550 ° C yielded a major pyrochlore structure phase. Excess of PbO in the target was also required to maintain stoichiometry in these films.