论文信息 - An accurate package model for 60W GaN power transistors

An accurate package model for 60W GaN power transistors

This paper reports on a straightforward yet highly accurate approach to determine a package model for microwave power transistors. The model is based on a lumped-element equivalent circuit for the package, into which compact models for the active transistor cells are embedded. A packaged 60W GaN-HEMT in FBH technology is used as an example. The device is designed to operate at 2 GHz. The basis of package analysis and modeling is a full 3D emsimulation. From these results, an equivalent circuit is derived and component values are determined analytically. The extraction methodology is not limited to a certain transistor technology or dedicated type of package. The model is verified by measurements and shows very good accuracy up to the third harmonic of the target frequency, i.e., 6GHz.

Matthias Rudolph | Wolfgang Heinrich | Jens Flucke | Franz-Josef Schmuckle

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