Realization of atomically controlled dopant devices in silicon.

was developed, similar to opticallithography found in the semiconductor industry and elec-tron-beam lithography used in the research environment.The basic concept involves passivating the Si surface withhydrogen atoms, thus forming an atomic monolayer of hy-drogen resist. The extremely confined electron beam from ascanning tunneling microscopy (STM) tip is then used toremove either multiple or individual hydrogen atoms fromthis resist under certain voltage and current conditions,thereby exposing the silicon surface underneath. Thesehighly reactive dangling bonds provide adsorption sites foratomic and molecular species including oxygen,

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