Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs
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G. Reimbold | Hiroshi Iwai | Gerard Ghibaudo | L. Tosti | S. Barnola | S. Barraud | C. Comboroure | R. Coquand | Pierre Perreau | V. Maffini-Alvaro | Claude Tabone | Vincent Delaye | F. Aussenac | M. Koyama | Christian Vizioz | H. Iwai | G. Ghibaudo | P. Perreau | L. Tosti | S. Barnola | M. Cassé | G. Reimbold | C. Tabone | S. Barraud | C. Vizioz | V. Delaye | V. Maffini-Alvaro | F. Aussenac | R. Coquand | C. Comboroure | Mikael Casse | M. Koyama
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