Characterization of 3000 volt MOS controlled thyristors
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The MOS controlled thyristor (MCT) is a power thyristor which is turned on and off by a highly interdigitated surface array of MOSFET gates. The high-voltage diffusiion-doped MCTs were developed by a three year contractual effort. These prototype MCTs have blocking voltages up to 3000 volts with a maximum controllable turn-off current density of 325 A/cm/sup 2/ in a 1 cm/sup 2/ active area die. A typical forward voltage drop is 2.5 V at 100 A with a 10/90% recovery time of 5 /spl mu/s. Characterization of these devices was undertaken and has shown: surge turn-on capability of 15.5 kA in a 16 /spl mu/s FWHM pulse; parallel operation of 3 devices at 300 A total current with less than 10% varation; and series operation of 3 devices at 5 kV, 150 A.
[1] M. Weiner,et al. Developmental MOS controlled thyristors (MCT) behavior , 1990, Nineteenth IEEE Symposium on Power Modulators.
[2] V.A.K. Temple. MOS Controlled thyristors (MCT's) , 1984, 1984 International Electron Devices Meeting.
[3] R. Pastore,et al. Progress Towards An MCT-based 100+ Kw High-frequency Inverter , 1991, Eighth IEEE International Conference on Pulsed Power.
[4] V.A.K. Temple,et al. MOS-Controlled thyristors—A new class of power devices , 1986, IEEE Transactions on Electron Devices.