Al2O3/InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy

[1]  F. Ren,et al.  Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy , 2011 .

[2]  N. Xu,et al.  Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy , 2011, IEEE Transactions on Electron Devices.

[3]  A. Suresh,et al.  Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors , 2010, IEEE Electron Device Letters.

[4]  G. Leusink,et al.  Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy , 2010 .

[5]  Jae Kyeong Jeong,et al.  Electronic structure of amorphous InGaO3(ZnO)0.5 thin films , 2009 .

[6]  Jong-Ho Lee,et al.  Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics , 2009 .

[7]  Pedro Barquinha,et al.  Toward High-Performance Amorphous GIZO TFTs , 2009 .

[8]  S. J. Pearton,et al.  High mobility InGaZnO4 thin-film transistors on paper , 2009 .

[9]  F. Ren,et al.  Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape , 2008 .

[10]  P. Barquinha,et al.  High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper , 2008, IEEE Electron Device Letters.

[11]  Yu-Lin Wang,et al.  Stable room temperature deposited amorphous InGaZnO4 thin film transistors , 2008 .

[12]  A. Stesmans,et al.  Internal photoemission at interfaces of high-κ insulators with semiconductors and metals , 2007 .

[13]  T. Kamiya,et al.  High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .

[14]  Tzu-Ying Lin,et al.  Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure , 2006 .

[15]  Yuan Lu,et al.  Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy , 2006 .

[16]  H. Ohta,et al.  Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 , 2005 .

[17]  Xiaodong Wang,et al.  X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition , 2003 .

[18]  Congting Sun,et al.  Surface characterization of transparent conductive oxide Al-doped ZnO films , 2000 .

[19]  R. Davis,et al.  Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction , 1998 .

[20]  J. Waldrop,et al.  Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy , 1996 .

[21]  T. C. Mcgill,et al.  Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy , 1991 .

[22]  T. C. Mcgill,et al.  Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy , 1990 .

[23]  E. A. Kraut,et al.  Measurement of semiconductor heterojunction band discontinuities by x‐ray photoemission spectroscopy , 1985 .