Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
暂无分享,去创建一个
[1] N. Formigoni,et al. β‐Silicon Carbide Films , 1969 .
[2] H. Matsunami,et al. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates , 1981, IEEE Transactions on Electron Devices.
[3] K. Kuroiwa,et al. Vapor‐Phase Deposition of Beta‐Silicon Carbide on Silicon Substrates , 1973 .
[4] H. Matsunami,et al. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer , 1980 .
[5] K. Jacobson. Growth, Texture, and Surface Morphology of SiC Layers , 1971 .
[6] W. C. Nieberding,et al. High-Temperature Electronic Requirements in Aeropropulsion Systems , 1981, IEEE Transactions on Industrial Electronics.
[7] J. W. Faust,et al. Silicon Carbide—1973 , 1977 .
[8] K. Bean,et al. Some Properties of Vapor Deposited SiC , 1967 .
[9] David C. Joy,et al. Electron channeling patterns in the scanning electron microscope , 1982 .