MSM photodetector fabricated on polycrystalline silicon

Interdigitated metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing metal contacts on top of a 2-/spl mu/m-thick layer of polycrystalline silicon (polysilicon). These detectors have a -3-dB bandwidth of 750 MHz and a responsivity of 0.13 A/W at 860 nm. The bandwidth is more than twice that reported for conventional silicon MSM photodetectors as a result of the thin absorbing layer made possible by the higher optical absorption of polysilicon. A simple fabrication process that is compatible with standard VLSI processes, together with good performance characteristics, make this an ideal detector for integrated optoelectronic receivers for use in short distance, parallel optical data links.

[1]  Amal K. Ghosh,et al.  Theory of the electrical and photovoltaic properties of polycrystalline silicon , 1980 .

[2]  Photodetector by Trench Formation etal- S emiconduc tor-Metal , 1996 .

[3]  B. Van Zeghbroeck,et al.  A novel high-speed silicon MSM photodetector operating at 830 nm wavelength , 1995, IEEE Electron Device Letters.

[4]  L.P.B. Katehi,et al.  Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers , 1998, IEEE Photonics Technology Letters.

[5]  P. Heremans,et al.  A monolithic optoelectronic receiver in standard 0.7-μm CMOS operating at 180 MHz and 176-fJ light input energy , 1997, IEEE Photonics Technology Letters.

[6]  W.H. Chang,et al.  11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology , 1993, IEEE Photonics Technology Letters.

[7]  D. R. Bowman,et al.  Polycrystalline-silicon integrated photoconductors for picosecond pulsing and gating , 1985, IEEE Electron Device Letters.

[8]  Stephen Y. Chou,et al.  Picosecond silicon metal-semiconductor-metal photodiode , 1993, Optics & Photonics.

[9]  J.C. Campbell,et al.  High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors , 1997, IEEE Photonics Technology Letters.

[10]  David S. Ginley,et al.  Passivation of grain boundaries in polycrystalline silicon , 1979 .

[11]  N. Puetz,et al.  Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors , 1997, IEEE Photonics Technology Letters.

[12]  R. A. Moore,et al.  Properties of alternately charged coplanar parallel strips by conformal mappings , 1968 .