Effects if X Irradiation and High Field Electron Injection on the Properties of Rapid Thermal Oxides

[1]  G. Rubloff,et al.  Hole trapping in SiO2 films annealed in low‐pressure oxygen atmosphere , 1987 .

[2]  David L. Griscom,et al.  Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures , 1985 .

[3]  M. Knoll,et al.  Comparative studies of tunnel injection and irradiation on metal oxide semiconductor structures , 1982 .

[4]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[5]  F. B. McLean A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.

[6]  P. S. Winokur,et al.  Interface-State Generation in Radiation-Hard Oxides , 1980, IEEE Transactions on Nuclear Science.

[7]  W. Fowler,et al.  Book reviewThe physics of SiO2 and its interfaces: Edited by S. T. Pantelides, Pergamon, New York, 1978. 488 pp., $38.50 , 1980 .

[8]  H. E. Boesch,et al.  An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate Insulators , 1979, IEEE Transactions on Nuclear Science.

[9]  Hisham Z. Massoud,et al.  Electron trapping in SiO2 at 295 and 77 °K , 1979 .

[10]  Bruce E. Deal,et al.  Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables , 1979 .

[11]  A. G. Revesz,et al.  Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on Silicon , 1977, IEEE Transactions on Nuclear Science.

[12]  M. H. Woods,et al.  Hole traps in silicon dioxide , 1976 .

[13]  W. C. Johnson Mechanisms of Charge Buildup in MOS Insulators , 1975, IEEE Transactions on Nuclear Science.

[14]  B. E. Deal The Current Understanding of Charges in the Thermally Oxidized Silicon Structure , 1974 .

[15]  H. E. Boesch,et al.  INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACE , 1978 .