Fast switcbing power MOS-gated (EST and BRT) thyristors

TURN ON GATE GATE CATHODE The characteristics of fast switching 600 V, asymmetric MOS-gated EST and BRT structures, with turn-off times as low as 500 nsec, are reported. The improvement in switching speed was obtained by 3 MeV electron irradiation. The effect of higher i PARASITIC switching speed on forward voltage drop and turn-off THYRISTO ~~~HYRISTOR capability is discussed. It is experimentally demonstrated for the first time that both the EST and BRT devices offer a better tradeoff curve between onstate voltage drop and turn-off time when compared with the IGBT.

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