Memory applications from 2D materials

As existing silicon-based memory technologies are reaching their fundamental limit, emerging memory alternatives, such as resistive random‐access memories (RRAMs), magnetic random‐access memories, and ferroelectric random‐access memories, are intensively investigated with the aim of improving capacity, write/read speed, efficiency, and implementing unconventional computing for data-centric applications. Recent studies have exploited the nature of 2-dimensional layered materials (2DLMs) to integrate highly disparate materials with unique physical and chemical properties without the constraint of lattice matching and have demonstrated novel memory devices (such as resistive and magnetic) with unprecedented characteristics or unique functionalities desired in emerging memory technologies. This article primarily provides an overview of the progress made, advantages, and challenges toward practical application of 2DLM-based memory units. In this regard, novel electronic properties of these 2DLMs allow designing not only the memory unit but also selectors and CMOS components essential for RRAM technology. Here, we also experimentally demonstrate a proof-of-concept heterostructure consisting of 2DLMs that fulfill the function of a memory unit (using MoTe2) and selector (using WSe2) with desired characteristics for RRAM integration. This demonstration underscores the potential of 2DLMs and their heterostructure toward the realization of future memory technologies.