XPS and HRTEM characterization of cobalt-nickel silicide thin films

[1]  T. Ogino,et al.  Interaction of Co with SiGe epilayer grown on Si(100) , 1999 .

[2]  E. Domashevskaya,et al.  SPECIFIC FEATURES OF ELECTRON STRUCTURES OF SOME THIN FILM D-SILICIDES , 1998 .

[3]  J. Kittl,et al.  Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies , 1998 .

[4]  N. McIntyre,et al.  Resolution enhancement of x‐ray photoelectron spectra by maximum entropy deconvolution , 1998 .

[5]  E. Kurmaev,et al.  Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system , 1997 .

[6]  Herbert L. Ho,et al.  Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films , 1996 .

[7]  S. Mantl,et al.  Patterning method for silicides based on local oxidation , 1995 .

[8]  F. d'Heurle,et al.  Analysis of the diffusion controlled growth of cobalt silicides in bulk and thin film couples , 1995 .

[9]  A. Lauwers,et al.  Electrical transport in (100)CoSi2/Si contacts , 1995 .

[10]  H. Roskos,et al.  Vertical silicon metal–semiconductor–metal photodetectors with buried CoSi2 contact , 1995 .

[11]  S. Zalkind,et al.  In situ X-ray diffraction measurements of silicide formation in the CoSi system , 1994 .

[12]  J. P. Stoquert,et al.  Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation , 1994 .

[13]  J. Pelleg,et al.  Silicide Formation in the Co-Si System by Rapid Thermal Annealing , 1994 .

[14]  M. Nicolet,et al.  Epitaxial CoSi2 films on Si(100) by solid‐phase reaction , 1994 .

[15]  W. M. Chen,et al.  Degradation mechanisms and improvement of thermal stability of CoSi 2 /polycrystalline Si layers , 1994 .

[16]  D. J. Oostra,et al.  Transition metal silicides in silicon technology , 1993 .

[17]  D. Briggs,et al.  High Resolution XPS of Organic Polymers: The Scienta ESCA300 Database , 1992 .

[18]  Pirri,et al.  Energy-band structure of CoSi2 epitaxially grown on Si(111). , 1988, Physical review. B, Condensed matter.

[19]  F. d'Heurle,et al.  The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution , 1986 .

[20]  M. Nicolet,et al.  Kinetics of CoSi2 from evaporated silicon , 1984 .

[21]  J. Poate,et al.  Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures , 1983 .

[22]  C. D. Wagner,et al.  Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds , 1982 .

[23]  A. Madhukar,et al.  Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems , 1982 .

[24]  R. L. Park,et al.  Comparison of APS and FRESCA core level binding energy measurements , 1982 .

[25]  C. Powell,et al.  Summary Abstract: Accurate determination of the energies of Auger electrons and photoelectrons from nickel, copper, and gold , 1982 .

[26]  T. Wirth,et al.  Investigation of NiSi and Pd3Si thin films by AES and XPS , 1980 .

[27]  P. J. Reucroft,et al.  Characterization of a sulfur‐resistant methanation catalyst by XPS. , 1979 .

[28]  M. Kiskinova,et al.  Ni/Si(111) system: Formation and evolution of two- and three-dimensional phases studied by spectromicroscopy , 1999 .

[29]  C. Comrie,et al.  Dominant diffusing species during cobalt silicide formation , 1996 .

[30]  W. Stickle,et al.  Handbook of X-Ray Photoelectron Spectroscopy , 1992 .

[31]  J. Ashley Taylor,et al.  Chemical reactions of N 2+ ion beams with group IV elements and their oxides , 1978 .

[32]  C. Nordling,et al.  Electron escape depth in silicon , 1974 .

[33]  C. Nordling,et al.  Influence of doping on the electron spectrum of silicon , 1972 .