FET pressure sensor and iterative method for modelling of the device

The pressure sensitive field effect transistor (PSFET) with insulated gate and its theoretical model developed by the authors are carefully discussed in this paper. The model explanation is preceded by short description of pressure sensor construction, fabricated in surface micromachining type technology. The pressure versus current characteristics of the model and comparison with measured output of real sensor are presented in this paper. Good convergence between simulated and measured sensor characteristics has been obtained in both theoretical and experimental sensor investigations. The observed differences are discussed in this paper.