The impact of growth parameters on the formation of InAs quantum dots on GaAs(1 0 0) by MOCVD

Abstract We have investigated InAs quantum dots (QD) formed on GaAs(1 0 0) using metal-organic chemical vapor deposition. Through a combination of room temperature photoluminescence and atomic force microscopy we have characterized the quantum dots. We have determined the effect of growth rate, deposited thickness, hydride partial pressure, and temperature on QD energy levels. The window of thickness for QD formation is very small, about 3 A of InAs. By decreasing the growth rate used to deposit InAs, the ground state transition of the QD is shifted to lower energies. The formation of optically active InAs QD is very sensitive to temperature. Temperatures above 500°C do not form optically active QDs. The thickness window for QD formation increases slightly at 480°C. This is attributed to the thermal dependence of diffusion length. The AsH 3 partial pressure has a non-linear effect on the QD ground state energy.

[1]  Diana L. Huffaker,et al.  Formation trends in quantum dot growth using metalorganic chemical vapor deposition , 2003 .

[2]  S. Hasegawa,et al.  Scanning tunneling miscroscopy study of InAs islands grown on GaAs(001) substrates , 2002 .

[3]  T. Nishinaga,et al.  Arsenic pressure dependence of incorporation diffusion length on (0 0 1) and (1 1 0) surfaces and inter-surface diffusion in MBE of GaAs , 1999 .

[4]  N. Ledentsov,et al.  Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status , 1999 .

[5]  T. Jones,et al.  Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy , 2001 .

[6]  Adriana Passaseo,et al.  Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition , 2001 .

[7]  D. Gerthsen,et al.  Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates , 1995 .

[8]  G. Rossetto,et al.  Experimental evidence of two-dimensional–three-dimensional transition in the Stranski–Krastanow coherent growth , 1997 .

[9]  T. Jones,et al.  Wetting layer evolution in InAs/GaAs(001) heteroepitaxy: effects of surface reconstruction and strain , 2002 .

[10]  Kohki Mukai,et al.  Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm , 2000 .

[11]  W. Seifert,et al.  Kinetics of self-assembled island formation: Part I—Island density , 2002 .

[12]  Huiyun Liu,et al.  Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots , 2000 .

[13]  S. Moisa,et al.  INAS/GAAS(100) SELF-ASSEMBLED QUANTUM DOTS, ARSENIC PRESSURE AND CAPPING EFFECTS , 2002 .

[14]  S. Muto,et al.  Adatom migration in Stranski-Krastanow growth of InAs quantum dots , 2002 .

[15]  D. W. Pashley,et al.  Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy , 2001 .