论文信息 - Guide line for standard CMOS traveling wave amplifier design

Guide line for standard CMOS traveling wave amplifier design

Design of traveling wave amplifier (TWA) in 0.13/spl mu/m standard CMOS technology is presented. Modelling of 80 /spl Omega/ coplanar wave guide used to synthesize inductors TWA's lines is presented. Asymmetric cascode, CPW and losses compensation technique allow to maximize the TWA amplifier bandwidth. Simulations with design kit and developed models for CPW show a 52 GHz bandwidth with a maximum power gain of 10 dB for a 84 mW power consumption. Size of the layouted chip is 2.6 /spl times/ 0.6mm/sup 2/.

J. Gaubert | M. Egels | P. Pannier

[1] W. Durr,et al. Investigation of microstrip and coplanar transmission lines on lossy silicon substrates without backside metallization , 1998 .

[2] M. Glenn,et al. 5-100 GHz InP coplanar waveguide MMIC distributed amplifier , 1990 .

[3] Y. Imai,et al. 0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC , 1995 .

[4] S. Yokokawa,et al. An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems , 2002 .

[5] D. J. Allstot,et al. A fully integrated 0.5-5.5 GHz CMOS distributed amplifier , 2000 .

[6] F. Ellinger. 60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz , 2005, IEEE Journal of Solid-State Circuits.

[7] Y. Imai,et al. Loss-compensated distributed baseband amplifier IC's for optical transmission systems , 1996 .

[8] M. Rodwell,et al. 112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers , 1998 .

[9] Y.M.M. Antar,et al. Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS , 2002, IEEE Microwave and Wireless Components Letters.

[10] T.H. Lee,et al. CMOS RF integrated circuits at 5 GHz and beyond , 2000, Proceedings of the IEEE.

[11] R.W. Brodersen,et al. Millimeter-wave CMOS design , 2005, IEEE Journal of Solid-State Circuits.