Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2

To meet device applications, it is essential to fabricate nondegenerate ZnSnN2 with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN2 with mobility higher than 20 cm2 V−1 s−1 was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN2 is wurstite. Band conduction is observed in the range 300–100 K and nearest neighbour hopping is observed in the range 100–70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN2 and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.

[1]  K. Guan,et al.  Carrier Tuning in ZnSnN2 by Forming Amorphous and Microcrystalline Phases. , 2019, Inorganic chemistry.

[2]  V. Roy,et al.  Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2 , 2019, Journal of Alloys and Compounds.

[3]  D. Jena,et al.  Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N , 2019, Applied Physics Letters.

[4]  A.-J. Hsu,et al.  Physical, photochemical, and extended piezoelectric studies of orthorhombic ZnSnN2 nanocolumn arrays , 2019, Applied Surface Science.

[5]  Karthik kumar Chinnakutti,et al.  Tailoring optoelectronic properties of earth abundant ZnSnN2 by combinatorial RF magnetron sputtering , 2019, Journal of Alloys and Compounds.

[6]  S. Lany,et al.  Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN2:O , 2019, Advanced materials.

[7]  Gerbrand Ceder,et al.  A map of the inorganic ternary metal nitrides , 2018, Nature Materials.

[8]  Angela N. Fioretti,et al.  Exciton photoluminescence and benign defect complex formation in zinc tin nitride , 2018 .

[9]  S. Bruyère,et al.  Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at room temperature , 2018, Solar Energy Materials and Solar Cells.

[10]  Y. Kajikawa.  Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs , 2018, physica status solidi (b).

[11]  F. Oba,et al.  Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles , 2018, 1804.09357.

[12]  K. Tang,et al.  The suppression of zinc interstitial related shallow donors in Te-doped ZnO microrods , 2018 .

[13]  Jung-Hoon Song,et al.  Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer , 2018 .

[14]  F. Zhuge,et al.  Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction , 2018 .

[15]  T. Taniguchi,et al.  Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber , 2017, Scientific Reports.

[16]  Gerbrand Ceder,et al.  Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides , 2017 .

[17]  Grant T. Junno,et al.  Vapor–liquid–solid synthesis of ZnSnN2 , 2017 .

[18]  Angela N. Fioretti,et al.  Monte Carlo Simulations of Disorder in ZnSnN2 and the Effects on the Electronic Structure , 2017 .

[19]  Angela N. Fioretti,et al.  Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors , 2017 .

[20]  F. Zhuge,et al.  Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions , 2016 .

[21]  M. Eickhoff,et al.  Ge doping of GaN beyond the Mott transition , 2016, 1604.00231.

[22]  T. Taniguchi,et al.  Synthesis of ZnSnN2 crystals via a high‐pressure metathesis reaction , 2016 .

[23]  Nathan S Lewis,et al.  Research opportunities to advance solar energy utilization , 2016, Science.

[24]  S. M. Durbin,et al.  Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber , 2015 .

[25]  Grant T. Junno,et al.  Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule , 2015 .

[26]  D. Boukhvalov,et al.  XPS and DFT study of Sn incorporation into ZnO and TiO2 host matrices by pulsed ion implantation , 2015, 1505.00992.

[27]  Angela N. Fioretti,et al.  Combinatorial insights into doping control and transport properties of zinc tin nitride , 2015, 1504.01819.

[28]  David S. Ginley,et al.  Thin film synthesis and properties of copper nitride, a metastable semiconductor , 2014 .

[29]  Keliang He,et al.  Synthesis, lattice structure, and band gap of ZnSnN_2 , 2013 .

[30]  R. L. Field,et al.  Growth, disorder, and physical properties of ZnSnN2 , 2013 .

[31]  Kris T. Delaney,et al.  Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 , 2013, Advanced materials.

[32]  M. Schilfgaarde,et al.  Quasiparticle band structure of Zn-IV-N-2 compounds , 2011 .

[33]  Walter R. L. Lambrecht,et al.  Electronic and lattice dynamical properties of II-IV-N2 semiconductors , 2011 .

[34]  C. Gopinath,et al.  Combustion Synthesis of Triangular and Multifunctional ZnO1−xNx (x ≤ 0.15) Materials , 2009 .

[35]  C. Rincón,et al.  Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3 , 2001 .

[36]  M. Scheffler,et al.  Composition, structure, and stability of RuO2(110) as a function of oxygen pressure , 2001, cond-mat/0107229.

[37]  H. Fritzsche.  Effect of compensation and correlation on conduction near the metal non-metal transition , 1980 .

[38]  Lin-wang Wang,et al.  Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights , 2014, Advanced materials.

[39]  J. Monecke,et al.  On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors , 1981 .