Development of RF-MEMS ohmic contact switch for mobile handsets applications

Here, we propose a practical single pole double throw (SPDT)-structured RF-MEMS switch for mobile handsets applications. This RF-MEMS switch has a very low insertion loss of 0.18dB and a high isolation of 32dB, up to 3GHz. And this RF-MEMS switch achieves small size by using through silicon via (TSV) structure (2.5×1.6×0.4mm3). Moreover, in the last of this paper, we show the feasibility of 3 voltage drive by integrating a charge pump IC, since a low-voltage drive is indispensable for mobile handsets applications.