论文信息 - Optimization of passivation layers for corrosion protection of silicon-based microelectrode arrays

Optimization of passivation layers for corrosion protection of silicon-based microelectrode arrays

Abstract The protectivity of passivation layers decides on the lifetime of silicon-based sensor chips in liquid and corrosive media. In this study the barrier effect of different organic (spin-coated) and inorganic (PECVD) thin films in brine was investigated using a microelectrode array as a microsensor model. The corrosion resistance of the microelectrode array was optimized by using buried conducting tracks and duplex (SiO2/Si3N4) or triplex (SiO2/Si3N4/SiO2) layers instead of inorganic monolayers. The failure mechanisms were investigated with respect to physical and mechanical effects, and corrosive attack.

[1] H. Lüth,et al. Modifications and characterization of a silicon-based microelectrode array , 1999 .

[2] L. Hench,et al. The effect of environment on silica fracture: Vacuum, carbon monoxide, water and nitrogen , 1998 .

[3] A Study on the Microphysical Mechanisms of Adsorption in Polyimide Layers for Microelectronic Applications , 1998 .

[4] J. W. Schultze,et al. Passivation and corrosion of microelectrode arrays , 1999 .

[5] S. Ang,et al. Potentiostatic testing of plasma-deposited silicon nitride thin protective films for bonds, bondwires and bondpads in microelectronic assemblies , 1992 .

[6] Si‐Chen Lee,et al. Oxidation of silicon nitride prepared by plasma‐enhanced chemical vapor deposition at low temperature , 1994 .

[7] H. K. Pulker,et al. Mechanical properties of optical films , 1982 .

[8] C. Chan,et al. Polymer surface modification by plasmas and photons , 1996 .

[9] T. F. Retajczyk,et al. Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films , 1980 .

[10] A silicon-based microelectrode array for chemical analysis , 2000 .

[11] William D. Brown,et al. Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films , 1997 .

[12] Hyman Joseph Levinstein,et al. Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation , 1978 .