Comparative Study of TDDB Models on BEOL Interconnects for Sub-20 nm Spacings
暂无分享,去创建一个
[1] J. Lloyd,et al. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics , 2005 .
[2] K. Croes,et al. Low field TDDB of BEOL interconnects using >40 months of data , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).
[3] J. McPherson,et al. Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[4] J. Sune,et al. A new quantitative hydrogen-based model for ultra-thin oxide breakdown , 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
[5] S. Holland,et al. A quantitative physical model for time-dependent breakdown in SiO2 , 1985, 23rd International Reliability Physics Symposium.
[6] T. Sullivan,et al. A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[7] J. Sune,et al. A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[8] J. Scarpulla,et al. A TDDB model of Si/sub 3/N/sub 4/-based capacitors in GaAs MMICs , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
[9] Suzumura Naohito,et al. A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS , 2007 .
[10] J. McPherson,et al. UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .
[11] J. R. Lloyd,et al. The Lucky Electron Model for TDDB in Low-k Dielectrics , 2016, IEEE Transactions on Device and Materials Reliability.