Comparative Study of TDDB Models on BEOL Interconnects for Sub-20 nm Spacings

Time Dependent Dielectric Breakdown (TDDB) data on Back-End of Line (BEOL) inter-metal dielectric comb-serpentine structures having a 17 -nm measured minimum spacing in fields varied from 1.3 MV/cm to 5.3 MV/cm and as a function of temperature (50°C to 125°C) were analyzed. The temperature study suggests a decreasing apparent activation energy with increasing field. In addition, several TDDB failure models were compared, with the lucky electron, the power law & the $\sqrt{\text{E}}$ model showing good fit.

[1]  J. Lloyd,et al.  Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics , 2005 .

[2]  K. Croes,et al.  Low field TDDB of BEOL interconnects using >40 months of data , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[3]  J. McPherson,et al.  Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[4]  J. Sune,et al.  A new quantitative hydrogen-based model for ultra-thin oxide breakdown , 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

[5]  S. Holland,et al.  A quantitative physical model for time-dependent breakdown in SiO2 , 1985, 23rd International Reliability Physics Symposium.

[6]  T. Sullivan,et al.  A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[7]  J. Sune,et al.  A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[8]  J. Scarpulla,et al.  A TDDB model of Si/sub 3/N/sub 4/-based capacitors in GaAs MMICs , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[9]  Suzumura Naohito,et al.  A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS , 2007 .

[10]  J. McPherson,et al.  UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .

[11]  J. R. Lloyd,et al.  The Lucky Electron Model for TDDB in Low-k Dielectrics , 2016, IEEE Transactions on Device and Materials Reliability.