Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
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Eduard A. Cartier | Richard Haight | Matthew Copel | Daeyoung Lim | E. Cartier | M. Copel | R. Haight | D. Lim
[1] Hiroshi M. Yamamoto,et al. Preparation of conductive ReO3 thin films , 2002 .
[2] Zheshen Li,et al. Roads to ultrathin silicon oxides , 2005 .
[3] J. Robertson. Band offsets of wide-band-gap oxides and implications for future electronic devices , 2000 .
[4] A. Shluger,et al. Vacancy and interstitial defects in hafnia , 2002 .
[5] A. Bhattacharya,et al. Growth of rhenium oxide thin films , 2000 .
[6] E. O. Johnson. Large-Signal Surface Photovoltage Studies with Germanium , 1958 .
[7] P. J. Estrup,et al. Work function study of rhenium oxidation using an ultra high vacuum scanning Kelvin probe , 2000 .
[8] Max J. Schulz,et al. Oxygen diffusion through thin Pt films on Si(100) , 1996 .
[9] B. E. White,et al. Contributions to the effective work function of platinum on hafnium dioxide , 2004 .
[10] D. Kwong,et al. Fermi pinning-induced thermal instability of metal-gate work functions , 2004, IEEE Electron Device Letters.
[11] Chenming Hu,et al. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions , 2002, IEEE Electron Device Letters.