Broadband design techniques and technology for future wireless and wire-line applications

This paper will describe MMIC design techniques and technology for key broadband front-end components that address future wireless and wire-line infrastructure applications. The paper will focus on three different topics: 1) history, design technique & technology evolution of the Darlington RF amplifier, 2) linear design for new 100 Gbps fiber ICs, and 3) high performance broadband GaN front-end designs for CATV and SDR RF communication systems.

[1]  A. Chini,et al.  A C-band high-dynamic range GaN HEMT low-noise amplifier , 2004, IEEE Microwave and Wireless Components Letters.

[2]  J. B. Shealy,et al.  Optimization of Gallium nitride high power technology for commercial and military applications , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[3]  K.W. Kobayashi Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5/spl mu/m ED PHEMT and a new circuit topology , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[4]  Mark J. W. Rodwell,et al.  Broad-band microwave power amplifiers in GaN technology , 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

[5]  Kevin W. Kobayashi,et al.  GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

[6]  K.W. Kobayashi A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[7]  Yuriy Greshishchev,et al.  A 24GS/s 6b ADC in 90nm CMOS , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[8]  K.W. Kobayashi,et al.  A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power , 2009, IEEE Journal of Solid-State Circuits.

[9]  Kevin W. Kobayashi,et al.  Darlington gain blocks eliminate bias resistor , 2006 .

[10]  G. Boeck,et al.  5W Highly Linear GaN power amplifier with 3.4 GHz bandwidth , 2007, 2007 European Microwave Integrated Circuit Conference.

[11]  K.W. Kobayashi,et al.  A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[12]  Y.C. Chen,et al.  Broadband GaN Dual-Gate HEMT Low Noise Amplifier , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[13]  J.M. Yang,et al.  Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[14]  K.W. Kobayashi,et al.  High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3 , 2006, 2006 Asia-Pacific Microwave Conference.

[15]  Bruce A. Fette,et al.  RF & Wireless Technologies: Newnes Know It All , 2007 .

[16]  A. P. Long,et al.  A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors , 1989 .

[17]  Ulrich L. Rohde,et al.  Microwave Circuit Design Using Linear and Nonlinear Techniques: Vendelin/Microwave Circuit Design Using Linear and Nonlinear Techniques , 1990 .

[18]  Chenggang Xie,et al.  Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications , 2007, MILCOM 2007 - IEEE Military Communications Conference.

[19]  Scott Sheppard,et al.  Commercial GaN Devices For Switching and Low Noise Applications , 2011 .

[20]  R. Vetury,et al.  0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology , 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

[21]  K.W. Kobayashi High Linearity Dynamic Feedback Darlington Amplifier , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[22]  P. Saunier,et al.  A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[23]  M. Wojtowicz,et al.  Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[24]  S. Keller,et al.  Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers , 2000, IEEE Journal of Solid-State Circuits.

[25]  G. A. Ellis,et al.  Wideband AlGaN/GaN HEMT MMIC low noise amplifier , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[26]  B. Geller,et al.  A broadband low cost GaN-on-silicon MMIC amplifier , 2008, 2008 IEEE Radio Frequency Integrated Circuits Symposium.

[27]  D. Wang,et al.  RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[28]  Sirenza Microdevices Standard 5 V medium power InGaP darlington amplifiers , 2005 .

[29]  Chenggang Xie,et al.  A high efficiency broadband monolithic gallium nitride distributed power amplifier , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[30]  Kevin W. Kobayashi,et al.  Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[31]  M. Wojtowicz,et al.  1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[32]  S.P. Voinigescu,et al.  A Low-Noise 40-GS/s Continuous-Time Bandpass $\Delta\Sigma$ ADC Centered at 2 GHz for Direct Sampling Receivers , 2007, IEEE Journal of Solid-State Circuits.

[33]  D. Yamauchi,et al.  Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers , 2009, IEEE Transactions on Microwave Theory and Techniques.