A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

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