论文信息 - Nanoimprinted organic field-effect transistors: fabrication, transfer mechanism and solvent effects on device characteristics

Nanoimprinted organic field-effect transistors: fabrication, transfer mechanism and solvent effects on device characteristics

The influence of solvent effects on the electrical characteristics of solution-processed organic field-effect transistors, with dihexylquaterthiophene (DH4T) as the active semiconductor material, has been investigated. A combination of nanoimprint and photo-lithographic techniques were used to produce nanometer-sized interdigitated electrodes with varying channel lengths. Typical channel lengths studied were in the regime of 40 µm-100 nm. The current-voltage characteristics of such devices were investigated and are discussed in terms of short channel effects and transistor characteristics. The observed variations in current-voltage characteristics of the OFETs with solvents were attributed to both solvent type and purity, with dry and distilled toluene giving the highest field-effect mobility, 9 × 10-3 cm2 V-1s-1, and I on /I off ratios of 104. Furthermore, the issue of long-term stability of these devices is addressed.

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