Millimeter Wave Oscillations from Tunnett Diodes

Space and time dispersions of carrier distribution included in an avalanche build up process are discussed in Si and GaAs, especially concentrating on exchange frequency from an avalanche to a tunneling in a carrier injection mechanism in transit time diodes. GaAs multilayer structure has been pointed out favorable to realize the relatively low exchange frequency. GaAs high-low-high multilayer diodes (M n+ n n+ ) are fabricated by successive liquid phase epitaxy and exhibit oscillations due to tunnel injection at 92 GHz.