A New Method to Determine Avalanche Multiplication Factor Using Vector Network Analyzer for p-n Junctions

In this letter, a new and simple radio-frequency (RF) -based method with dead-space-based theory considered for mixed avalanche and tunneling mechanisms is presented to determine the pure avalanche multiplication factor up to near 1 MV/cm for the first time. By extracting the equivalent circuit parameters based on a vector network analyzer, the avalanche multiplication factor can be determined and can be distinguished from the tunneling multiplication factor. The saturated avalanche multiplication factor with increased electric field is observed at high field. This saturated phenomenon obtained from experimental data is the first reported result for the two-terminal p-n junction. The validity of the obtained avalanche multiplication factor is verified by the dead-space-based theory. The proposed alternative avalanche multiplication factor extraction can be applied to breakdown characterization for the state-of-the-art device such as impact-ionization metal-oxide semiconductor (I-MOS) transistor and tunnel devices.

[1]  C. R. Crowell,et al.  Threshold energy effect on avalanche breakdown voltage in semiconductor junctions , 1975 .

[2]  D. S. Pan,et al.  New phenomena of mixed breakdown in silicon , 2006 .

[3]  W. E. Schroeder,et al.  Avalanche region width in various structures of IMPATT diodes , 1971 .

[4]  G.I. Haddad,et al.  Mixed tunneling and avalanche mechanisms in p-n junctions and their effects on microwave transit-time devices , 1978, IEEE Transactions on Electron Devices.

[5]  Wei-Cheng Lin,et al.  A Novel p-i-n Inductor for Tunable Wideband Matching Network Application , 2013, IEEE Transactions on Electron Devices.

[6]  J. J. Lynch,et al.  W-Band Sb-Diode Detector MMICs for Passive Millimeter Wave Imaging , 2008, IEEE Microwave and Wireless Components Letters.

[7]  D. S. Pan,et al.  Theory for high Q p-n junction avalanche inductors , 2006 .

[8]  S. L. Miller.  Avalanche Breakdown in Germanium , 1955 .

[9]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[10]  Wei-Cheng Lin,et al.  Modeling Inductive Behavior of MOSFET Scattering Parameter $S _{22}$ in the Breakdown Regime , 2012, IEEE Transactions on Microwave Theory and Techniques.

[11]  Yaoming Sun,et al.  A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration , 2011, IEEE Microwave and Wireless Components Letters.

[12]  Impact ionization in thin silicon diodes , 2004, IEEE Electron Device Letters.

[13]  A.M.E. Safwat,et al.  Sensitivity analysis of calibration standards for fixed probe spacing on-wafer calibration techniques [vector network analyzers] , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[14]  Chenming Hu,et al.  MOS capacitance measurements for high-leakage thin dielectrics , 1999 .

[15]  H.P. Moyer,et al.  1$/f$ Noise of Sb-Heterostructure Diodes for Pre-Amplified Detection , 2007, IEEE Microwave and Wireless Components Letters.