论文信息 - Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

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