A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting

As pixel sizes continue to scale down, backside-illuminated (BSI) technology has been recently adopted as a solution to improve pixel SNR performance [1,2]. In addition, as the application of image sensors widens from digital still cameras to digital camcorders, high-resolution and high-speed operation are required. This paper presents 1/2.33-inch 14.6Mpixel CMOS image sensor employing a 1.4μm BSI pixel architecture with a floating-diffusion (FD) boosting scheme that enables high SNR and high speed read-out.

[1]  S. Iwabuchi,et al.  A Back-Illuminated High-Sensitivity Small-Pixel Color CMOS Image Sensor with Flexible Layout of Metal Wiring , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[2]  Hirofumi Yamashita,et al.  A 1/2.5-inch 8Mpixel CMOS image sensor with a staggered shared-pixel architecture and an FD-boost operation , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[3]  Keiji Mabuchi,et al.  A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS image sensor , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[4]  Tomoyuki Umeda,et al.  CMOS image sensor using a floating diffusion driving buried photodiode , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[5]  Juha Alakarhu.  Image Sensors and Image Quality in Mobile Phones , 2007 .

[6]  Tae-Chan Kim,et al.  Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited) , 2008, 2008 IEEE International Electron Devices Meeting.