Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies <i>f</i><sub>T</sub> and <i>f</i><sub>MAX</sub> simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5 <; <i>V</i><sub>DS</sub> <; 10 V, while <i>f</i><sub>MAX</sub> reaches a maximum value of <i>f</i><sub>MAX</sub> = 230 GHz at <i>V</i><sub>DS</sub> = 6 V. This is the first realization of fully passivated AlInN/GaN HEMTs with <i>f</i><sub>T</sub>/<i>f</i><sub>MAX</sub> ≥ 205 GHz, a performance enabled by the careful shaping of the gate electrode profile and the use of a thin 60-nm SiN encapsulation film.

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