PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics
暂无分享,去创建一个
Yoon-Ha Jeong | Chang Yong Kang | J.C. Lee | Byoung Hun Lee | Rino Choi | Hi-Deok Lee | H. Lee | B. Lee | R. Choi | C. Kang | Y. Jeong | J.C. Lee | Ooksang Yoo | Kyong Taek Lee | Ook Sang Yoo | Kyong-Taek Lee
[1] G. Pant,et al. High performance gate first HfSiON dielectric satisfying 45nm node requirements , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[2] I. Yamamoto,et al. A 65nm-node LSTP (Low standby power) poly-Si/a-Si/HfSiON transistor with high I/sub on/-I/sub standby/ ratio and reliability , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
[3] Evgeni P. Gusev,et al. Charge detrapping in HfO2 high-κ gate dielectric stacks , 2003 .
[4] A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes , 2003, IEEE International Electron Devices Meeting 2003.
[5] T. Tatsumi,et al. High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics , 2004 .
[6] G. Bersuker,et al. Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices , 2005, IEEE Transactions on Device and Materials Reliability.
[7] G. Bersuker,et al. Novel dielectric materials for future transistor generations , 2005, 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05..
[8] Howard R. Huff,et al. Dielectrics for future transistors , 2004 .
[9] G. Bersuker,et al. Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.
[10] Massimo V. Fischetti,et al. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .
[11] Min-Hwa Chi,et al. Reliability of HfSiON as gate dielectric for advanced CMOS technology , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
[12] G. Ghibaudo,et al. Review on high-k dielectrics reliability issues , 2005, IEEE Transactions on Device and Materials Reliability.
[13] Guido Groeseneken,et al. Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's , 1990 .
[14] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[15] Young-Wug Kim,et al. Ultra low power 6T-SRAM chip with improved transistor performance and reliability by HfO2-Al2O3 high-K gate dielectric process optimization , 2003 .