PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs) becomes more significant than positive bias temperature stress. In an analysis of metal-gate/high-k devices, accelerated channel HCs were found to induce permanent interface damage. Moreover, the overall threshold voltage shifts caused by HC stress were enhanced at higher temperatures, which is due to an association with positive bias temperature instability. Therefore, high-temperature HC stress has emerged as a dominant degradation factor in short-channel nMOSFETs with metal-gate/high-k dielectrics.

[1]  G. Pant,et al.  High performance gate first HfSiON dielectric satisfying 45nm node requirements , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[2]  I. Yamamoto,et al.  A 65nm-node LSTP (Low standby power) poly-Si/a-Si/HfSiON transistor with high I/sub on/-I/sub standby/ ratio and reliability , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

[3]  Evgeni P. Gusev,et al.  Charge detrapping in HfO2 high-κ gate dielectric stacks , 2003 .

[4]  A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes , 2003, IEEE International Electron Devices Meeting 2003.

[5]  T. Tatsumi,et al.  High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics , 2004 .

[6]  G. Bersuker,et al.  Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices , 2005, IEEE Transactions on Device and Materials Reliability.

[7]  G. Bersuker,et al.  Novel dielectric materials for future transistor generations , 2005, 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05..

[8]  Howard R. Huff,et al.  Dielectrics for future transistors , 2004 .

[9]  G. Bersuker,et al.  Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[10]  Massimo V. Fischetti,et al.  Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .

[11]  Min-Hwa Chi,et al.  Reliability of HfSiON as gate dielectric for advanced CMOS technology , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[12]  G. Ghibaudo,et al.  Review on high-k dielectrics reliability issues , 2005, IEEE Transactions on Device and Materials Reliability.

[13]  Guido Groeseneken,et al.  Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's , 1990 .

[14]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[15]  Young-Wug Kim,et al.  Ultra low power 6T-SRAM chip with improved transistor performance and reliability by HfO2-Al2O3 high-K gate dielectric process optimization , 2003 .