论文信息 - Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses - 字舞流文

Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses

B. Shen | Youliao Zheng | Z. Zheng | J. Chu | J. Z. Yu | Chu-Wei Jiang | Y. Gui | Zengli Huang | S. Guo | G. Zheng | J. Yu