论文信息 - Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth - 字舞流文

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

N. B. Smirnov | N. M. Shmidt | S. Pearton | In‐Hwan Lee | A. Polyakov | A. Markov | A. Govorkov | S. Karpov | Jin‐Woo Ju | N. Shmidt | Jin-woo Ju