ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA

The proper t ies of glow discharge uc S i have been inves t iga ted by conduct ivi ty , Hall e f f e c t and f i e l d e f f e c t measurements as a funct ion of crysta l l i t e s i z e and phosphorus doping r a t i o . It i s concluded t h a t the l a r g e increase i n a over a-Si i s almost e n t i r e l y caused by an increased c a r r i e r densi ty r e s u l t i n g from delocal ised e lec t ron t a i l s t a t e s . The s ign of the Hall constant remains normal down t o an extrapolated c r y s t a l l i t e s i z e of about 20A.