O-Band III–V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler

In this letter, we report on the design, fabrication, and performance of a hetero-integrated III-V/silicon distributed-feedback (DFB) laser in the O-band, with improved integration compatibility with the existing silicon photonics platforms. This structure uses amorphous silicon deposited at a low temperature (350 °C) to efficiently couple light from the III-V region into a thin silicon-on-insulator waveguide, without disrupting other existing silicon components. Continuous-wave regime is achieved at 25 °C, while lasing threshold and maximum output power in the waveguides are 50 mA and 33.6 mW, respectively. The maximum power coupled into a single-mode fiber at one end of the DFB is up to 4.7 mW.

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