论文信息 - Surface Modification Using Highly Charged Ions

Surface Modification Using Highly Charged Ions

The surfaces of HOPG and Si(111) irradiated with highly charged ions (HCIs) were observed using a secondary electron microscope (SEM) and an atomic force microscope (AFM). The SEM contrast appears between irradiated and unirradiated surfaces when the fluence come to 1013∼1014/cm2, while the fluence of 1015∼1016/cm2 is necessary for the irradiation with singly charged ions. The results exhibit that the potential energy of HCI produces surface modification efficiently without disturbing bulk structure.

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