Performance enhancement in silicon solar cell by inverted nanopyramid texturing and silicon quantum dots coating

In this study, the performance enhancement in silicon solar cell by inverted nanopyramid texturing and silicon quantum dot coating has been investigated. The inverted nanopyramid was fabricated by laser interference lithography and subsequent pattern transfer dry etching and KOH wet etching. The silicon quantum dots were synthesized by size controllable microemulsion technique and were characterized by transmission electron microscopy, UV-Vis spectroscopy, and photoluminescence spectroscopy techniques. The nanopyramid texturing with 700 nm period inverted pyramid reduced the reflection below 10% over broad wavelength region. The overall efficiency of solar cell increased by 47% by inverted nanopyramid texturing combined with silicon quantum dot coating.

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